Isochronous and isothermal annealing of defects

Authors

  • Ya.P. Saliy Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine

DOI:

https://doi.org/10.15330/pcss.25.4.747-749

Keywords:

annealing, defects, bimolecular reaction, approximation, GaP

Abstract

The regularities of isothermal and isochronous discrete and continuous annealed material at a constant rate are considered on the example of monomolecular reaction and bimolecular recombination of Frenkel pairs. For isochronous annealing of radiation defects after neutron irradiation of GaP, process parameters were obtained.

References

V.V. Gann, A.V. Volobuev. Mathematical simulation of processes of diffusion and annealing of defects. KhFTI Issues of atomic science and technology. Series Physics of radiation damage and radiation materials science, 2(7), 117 (1984).

V.L. Vinetskii, G.A. Kholodar, Quasichemical reactions involving point defects in Irradiated Semiconductors, Physics of Radiation Effects in Crystals, Elsevier Science Publishers B.V, 344 (1986)

V.L. Vynetskii, G.A. Kholodar, Radiation physics of semiconductors (Scientific opinion, Kyiv, 1979)

O. Konoreva, Zh. Pavlenko, M. Pinkovs'ka, V. Tartachnyk, Influence of the structure defects on optical absorption in gallium phosphide influence of radiation defects, induced with reactor's, Bulletin of NTUU "KPI". Instrumentation series, 38, 78 (2009).

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Published

2024-11-25

How to Cite

Saliy, Y. (2024). Isochronous and isothermal annealing of defects. Physics and Chemistry of Solid State, 25(4), 747–749. https://doi.org/10.15330/pcss.25.4.747-749

Issue

Section

Scientific articles (Physics)