Gaidar GP. Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique. Phys.Chem.Sol.State [Internet]. 2018 Mar. 15 [cited 2024 Oct. 14];19(1):40-7. Available from: https://ktipe.pnu.edu.ua/index.php/pcss/article/view/76