Modelling of a multilayer high-tech film for an infrared photodetector (3.5-5.0 μm)
DOI:
https://doi.org/10.15330/pcss.25.4.757-763Keywords:
Wave interference, matrix method, infrared sensor, infrared LEDAbstract
The paper investigates the properties of an antireflective film for a photodetector made of indium antimonide (InSb), configured for transmission in the infrared range (3.5-5.0 μm), which coincides with the absorption peak of carbon dioxide (CO2). The film is a four-layer coating formed by the following materials: silicon dioxide (SiO2), silicon monoxide (SiO), silicon suboxide (SiO1<x<2) and silicon (Si), which are placed in the order of increasing refractive index: 1.45, 1.9, 2.6 and 3.2. In this way, the film provides an increase in the refractive index from 1 to a value close to the refractive index of the active material of the photodiode (4.0). The matrix method is used to calculate the complex light reflection coefficient for perpendicular and parallel polarization in the range of wavelengths and angles of incidence on the film surface that correspond to the characteristics of the infrared radiation sensor. The range of angles is selected based on the geometric characteristics of the infrared non-dispersive sensor AK9710ADF01 developed by Asahi Kasei. The spectral composition of the light is determined by the characteristics of the L15895 series infrared LED manufactured by the Hamamatsu company. As a result of the conducted research, the optimal values of the thicknesses of the layers are calculated, which provide a reflection coefficient of 22% for unpolarized radiation, which is compared to the values that are characteristic of modern infrared photodetectors.
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Copyright (c) 2024 Ruslan Politanskyi, Ihor Kogut, Maria Vistak, Zinoviy Mykytyuk, Olha Shymchyshyn, Ivan Diskovskyi
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